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| PD - 95297 IRF7321D2PBF Co-packaged HEXFET(R) Power MOSFET and Schottky Diode l Ideal For Buck Regulator Applications l P-Channel HEXFET(R) l Low VF Schottky Rectifier l Generation 5 Technology l SO-8 Footprint l Lead-Free Description l FETKY MOSFET & Schottky Diode A A S G 1 2 3 4 8 7 6 5 TM K K D D VDSS = -30V RDS(on) = 0.062 Schottky Vf = 0.52V Top View The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ -10V Pulsed Drain Current A Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt A Junction and Storage Temperature Range Maximum Units A -4.7 -3.8 -38 2.0 1.3 16 20 -5.0 -55 to +150 W mW/C V V/ns C Thermal Resistance Ratings Parameter RJA Junction-to-Ambient A Maximum 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) ISD -2.9A, di/dt -77A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s - duty cycle 2% Surface mounted on FR-4 board, t 10sec. www.irf.com 10/12/04 IRF7321D2PBF MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 --- --- -1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.042 0.076 --- 7.7 --- --- --- --- 23 3.8 5.9 13 13 34 32 710 380 180 Typ. --- --- -0.78 44 42 Max. Units Conditions --- V VGS = 0V, ID = -250A 0.062 VGS = -10V, ID = -4.9A 0.098 VGS = -4.5V, ID = -3.6A --- V VDS = VGS, ID = -250A --- S VDS = -15V, ID = -4.9A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 55C 100 VGS = -20V nA -100 VGS = 20V 34 ID = -4.9A 5.7 nC VDS = -15V 8.9 VGS = -10V, See Fig. 6 19 VDD = -15V 20 ID = -1.0A ns 51 RG = 6.0 48 RD = 15, --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 Max. Units Conditions -2.5 A -30 -1.0 V TJ = 25C, IS = -1.7A, VGS = 0V 66 ns TJ = 25C, IF = -1.7A 63 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Wave, Tc = 25C See Fig.14 Tc = 70C 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Conditions If = 3.0, Tj = 25C If = 6.0, Tj = 25C If = 3.0, Tj = 125C If = 6.0, Tj = 125C . Vr = 30V Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C Rated Vr MOSFET Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Schottky Diode Maximum Ratings If (av) I SM Max. Units 3.2 A 2.0 200 20 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward voltage drop Max. Units 0.57 0.77 V 0.52 0.79 0.30 mA 37 310 pF 4900 V/s Irm Ct dv/dt Max. Reverse Leakage current Max. Junction Capacitance Max. Voltage Rate of Charge ( HEXFET is the reg. TM for International Rectifier Power MOSFET's ) 2 www.irf.com IRF7321D2PBF Power Mosfet Characteristics 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 0.1 1 10 -3.0V 1 1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 -VDS, Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 -4.9A ID =-4.9A -I D , Drain-to-Source Current (A) 1.5 TJ = 25C TJ = 150C 10 1.0 0.5 1 3.0 3.5 4.0 4.5 V DS = -10V 20s PULSE WIDTH 5.0 5.5 6.0 A 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7321D2PBF Power Mosfet Characteristics 1400 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd 20 SHORTED ID = -4.9A VDS =-15V 1200 -VGS , Gate-to-Source Voltage (V) A 16 C, Capacitance (pF) 1000 Ciss Coss 800 12 600 8 400 Crss 4 200 0 1 10 100 0 0 10 20 30 40 - V DS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150C 10 -ID , Drain Current (A) I 100us 10 TJ = 25C 1ms 1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 1.4 -VSD , Source-to-Drain Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7321D2PBF Power Mosfet Characteristics 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient RDS (on) , Drain-to-Source On Resistance () 0.5 RDS (on) , Drain-to-Source On Resistance () 0.6 0.16 0.12 0.4 0.3 0.08 I D = -4.9A 0.2 V GS = -4.5V 0.04 0.1 VGS = -10V A 0.0 0 10 20 30 0.00 0 -I D , Drain Current (A) -V GS , Gate -to-Source Voltage (V) 3 6 9 12 15 A Fig 10. Typical On-Resistance Vs. Drain Current Fig 11. Typical On-Resistance Vs. Gate Voltage www.irf.com 5 IRF7321D2PBF Schottky Diode Characteristics 100 100 10 TJ = 150C 125C 100C 75C 50C 25C Reverse Current - IR (mA) 1 0.1 Instantaneous Forward Current - IF (A) 10 0.01 TJ = 150C TJ = 125C TJ = 25C 0.001 ) 0 10 20 30 Reverse Voltage - V R (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage Allowable Am bient Temperature - (C) 160 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 D = 3/4 D = 1/2 D =1/3 D = 1/4 D = 1/5 DC V r = 80% Rated R thJA = 62.5C/W Square wave 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop - V FM (V) Forward Voltage Drop - VF (V) Fig. 12 - Typical Forward Voltage Drop Characteristics A Average Forward Current - I F(AV) (A) Fig.14 - Maximum Allowable Ambient Temp. Vs. Forward Current 6 www.irf.com IRF7321D2PBF SO-8 (Fetky) Package Outline D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING T O A S UBS TRAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: THIS IS AN IRF7807D1 (FET KY) DATE CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX 807D1 www.irf.com 7 IRF7321D2PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 8 www.irf.com |
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